Explicit continuous model for long-channel undoped surrounding gate MOSFETs

Benjamin Iñíguez; David Jiménez; Jaume Roig; Hamdy A. Hamid; Lluís F. Marsal; Josep Pallarès

doi:10.1109/TED.2005.852892

Explicit continuous model for long-channel undoped surrounding gate MOSFETs

Benjamin Iñíguez
, David Jiménez
, Jaume Roig
, Hamdy A. Hamid
, Lluís F. Marsal
, Josep Pallarès

Universidad Rovira i Virgili
Polytechnic University of Catalonia
CNM-CSIC

Research output: Contribution to journal › Article › peer-review

217 Scopus citations

Abstract

We present an analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages. The model is based on a new unified charge control model developed for this device. The explicit model shows good agreement with the numerical exact solution obtained from the new charge control model, which was previously validated by comparison with three-dimensional numerical simulations.

Original language	English
Pages (from-to)	1868-1873
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	8
DOIs	https://doi.org/10.1109/TED.2005.852892
State	Published - Aug 2005
Externally published	Yes

Keywords

Charge control model
Compact device modeling
Surrounding-gate (SGT) MOSFETs

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10.1109/TED.2005.852892

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@article{bd782dd2a5cb4562a0435907eeba6239,

title = "Explicit continuous model for long-channel undoped surrounding gate MOSFETs",

abstract = "We present an analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages. The model is based on a new unified charge control model developed for this device. The explicit model shows good agreement with the numerical exact solution obtained from the new charge control model, which was previously validated by comparison with three-dimensional numerical simulations.",

keywords = "Charge control model, Compact device modeling, Surrounding-gate (SGT) MOSFETs",

author = "Benjamin I{\~n}{\'i}guez and David Jim{\'e}nez and Jaume Roig and Hamid, \{Hamdy A.\} and Marsal, \{Llu{\'i}s F.\} and Josep Pallar{\`e}s",

year = "2005",

month = aug,

doi = "10.1109/TED.2005.852892",

language = "English",

volume = "52",

pages = "1868--1873",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Explicit continuous model for long-channel undoped surrounding gate MOSFETs

AU - Iñíguez, Benjamin

AU - Jiménez, David

AU - Roig, Jaume

AU - Hamid, Hamdy A.

AU - Marsal, Lluís F.

AU - Pallarès, Josep

PY - 2005/8

Y1 - 2005/8

N2 - We present an analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages. The model is based on a new unified charge control model developed for this device. The explicit model shows good agreement with the numerical exact solution obtained from the new charge control model, which was previously validated by comparison with three-dimensional numerical simulations.

AB - We present an analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages. The model is based on a new unified charge control model developed for this device. The explicit model shows good agreement with the numerical exact solution obtained from the new charge control model, which was previously validated by comparison with three-dimensional numerical simulations.

KW - Charge control model

KW - Compact device modeling

KW - Surrounding-gate (SGT) MOSFETs

UR - https://www.scopus.com/pages/publications/23344447576

U2 - 10.1109/TED.2005.852892

DO - 10.1109/TED.2005.852892

M3 - Article

AN - SCOPUS:23344447576

SN - 0018-9383

VL - 52

SP - 1868

EP - 1873

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

ER -

Explicit continuous model for long-channel undoped surrounding gate MOSFETs

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Keywords

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