Epitaxial erbium silicide on Ge+ implanted silicon

A. Travlos; N. Boukos; G. Apostolopoulos; C. J. Aidinis; L. Bischoff

doi:10.1016/S0168-583X(02)01287-9

Epitaxial erbium silicide on Ge⁺ implanted silicon

A. Travlos
, N. Boukos
, G. Apostolopoulos
, C. J. Aidinis
, L. Bischoff

Demokritos National Centre for Scientific Research
National and Kapodistrian University of Athens
Helmholtz-Zentrum Dresden-Rossendorf

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Erbium silicide layers were grown epitaxially on Ge⁺ ion implanted Si. Epitaxy of ErSi_2-x layers was achieved at a temperature of 750 °C. The layers are grown in the tetragonal phase. The growth of the silicide layers resulted in a drastic decrease of the dislocations in the SiGe layer accompanied by the accumulation of defects at the SiGe/ErSi_2-x interface. A small redistribution of the Ge in the SiGe layer was also observed.

Original language	English
Pages (from-to)	174-179
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	196
Issue number	1-2
DOIs	https://doi.org/10.1016/S0168-583X(02)01287-9
State	Published - Nov 2002
Externally published	Yes

Keywords

Epitaxy
Implantation
Si-Ge thin films
TEM

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10.1016/S0168-583X(02)01287-9

Cite this

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title = "Epitaxial erbium silicide on Ge+ implanted silicon",

abstract = "Erbium silicide layers were grown epitaxially on Ge+ ion implanted Si. Epitaxy of ErSi2-x layers was achieved at a temperature of 750 °C. The layers are grown in the tetragonal phase. The growth of the silicide layers resulted in a drastic decrease of the dislocations in the SiGe layer accompanied by the accumulation of defects at the SiGe/ErSi2-x interface. A small redistribution of the Ge in the SiGe layer was also observed.",

keywords = "Epitaxy, Implantation, Si-Ge thin films, TEM",

author = "A. Travlos and N. Boukos and G. Apostolopoulos and Aidinis, \{C. J.\} and L. Bischoff",

year = "2002",

month = nov,

doi = "10.1016/S0168-583X(02)01287-9",

language = "English",

volume = "196",

pages = "174--179",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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TY - JOUR

T1 - Epitaxial erbium silicide on Ge+ implanted silicon

AU - Travlos, A.

AU - Boukos, N.

AU - Apostolopoulos, G.

AU - Aidinis, C. J.

AU - Bischoff, L.

PY - 2002/11

Y1 - 2002/11

N2 - Erbium silicide layers were grown epitaxially on Ge+ ion implanted Si. Epitaxy of ErSi2-x layers was achieved at a temperature of 750 °C. The layers are grown in the tetragonal phase. The growth of the silicide layers resulted in a drastic decrease of the dislocations in the SiGe layer accompanied by the accumulation of defects at the SiGe/ErSi2-x interface. A small redistribution of the Ge in the SiGe layer was also observed.

AB - Erbium silicide layers were grown epitaxially on Ge+ ion implanted Si. Epitaxy of ErSi2-x layers was achieved at a temperature of 750 °C. The layers are grown in the tetragonal phase. The growth of the silicide layers resulted in a drastic decrease of the dislocations in the SiGe layer accompanied by the accumulation of defects at the SiGe/ErSi2-x interface. A small redistribution of the Ge in the SiGe layer was also observed.

KW - Epitaxy

KW - Implantation

KW - Si-Ge thin films

KW - TEM

UR - https://www.scopus.com/pages/publications/0036844287

U2 - 10.1016/S0168-583X(02)01287-9

DO - 10.1016/S0168-583X(02)01287-9

M3 - Article

AN - SCOPUS:0036844287

SN - 0168-583X

VL - 196

SP - 174

EP - 179

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

ER -

Epitaxial erbium silicide on Ge⁺ implanted silicon

Abstract

Keywords

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