Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation

M. R. Balboul; A. Abdel-Galil; I. S. Yahia; A. Sharaf

doi:10.1155/2016/3183909

Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation

M. R. Balboul
, A. Abdel-Galil
, I. S. Yahia
, A. Sharaf

Egyptian Atomic Energy Authority
Ain Shams University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose of γ-irradiation increases the activation energy of CdS thin film. In addition, γ-irradiation was used to change the sign of Hall coefficient, R_H, of CdS thin film from negative to positive irrespective of temperature. The Hall mobility mechanism shows noticeable change after γ-irradiation from decreasing to increasing with raising the temperature. In depth, analysis was done using capacitance-voltage measurement in order to realize the modification in the CdS/Si junction band gap after γ-irradiation. Several parameters were also studied such as charge carrier concentration, N_D, and flat band potential, V_fb. The γ-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.

Original language	English
Article number	3183909
Journal	Advances in Materials Science and Engineering
Volume	2016
DOIs	https://doi.org/10.1155/2016/3183909
State	Published - 2016
Externally published	Yes

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title = "Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation",

abstract = "Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose of γ-irradiation increases the activation energy of CdS thin film. In addition, γ-irradiation was used to change the sign of Hall coefficient, RH, of CdS thin film from negative to positive irrespective of temperature. The Hall mobility mechanism shows noticeable change after γ-irradiation from decreasing to increasing with raising the temperature. In depth, analysis was done using capacitance-voltage measurement in order to realize the modification in the CdS/Si junction band gap after γ-irradiation. Several parameters were also studied such as charge carrier concentration, ND, and flat band potential, Vfb. The γ-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.",

author = "Balboul, \{M. R.\} and A. Abdel-Galil and Yahia, \{I. S.\} and A. Sharaf",

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year = "2016",

doi = "10.1155/2016/3183909",

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volume = "2016",

journal = "Advances in Materials Science and Engineering",

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T1 - Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation

AU - Balboul, M. R.

AU - Abdel-Galil, A.

AU - Yahia, I. S.

AU - Sharaf, A.

PY - 2016

Y1 - 2016

N2 - Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose of γ-irradiation increases the activation energy of CdS thin film. In addition, γ-irradiation was used to change the sign of Hall coefficient, RH, of CdS thin film from negative to positive irrespective of temperature. The Hall mobility mechanism shows noticeable change after γ-irradiation from decreasing to increasing with raising the temperature. In depth, analysis was done using capacitance-voltage measurement in order to realize the modification in the CdS/Si junction band gap after γ-irradiation. Several parameters were also studied such as charge carrier concentration, ND, and flat band potential, Vfb. The γ-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.

AB - Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose of γ-irradiation increases the activation energy of CdS thin film. In addition, γ-irradiation was used to change the sign of Hall coefficient, RH, of CdS thin film from negative to positive irrespective of temperature. The Hall mobility mechanism shows noticeable change after γ-irradiation from decreasing to increasing with raising the temperature. In depth, analysis was done using capacitance-voltage measurement in order to realize the modification in the CdS/Si junction band gap after γ-irradiation. Several parameters were also studied such as charge carrier concentration, ND, and flat band potential, Vfb. The γ-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.

UR - https://www.scopus.com/pages/publications/84973137984

U2 - 10.1155/2016/3183909

DO - 10.1155/2016/3183909

M3 - Article

AN - SCOPUS:84973137984

SN - 1687-8434

VL - 2016

JO - Advances in Materials Science and Engineering

JF - Advances in Materials Science and Engineering

M1 - 3183909

ER -

Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation

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