Abstract
The electrical and photoresponse properties of the p-Si/P3HT/Al and p-Si/P3HT:MEH-PPV/Al organic devices have been investigated by current-voltage and capacitance-voltage characteristics. The diode parameters such as ideality factor, barrier height, rectification ratio, Richardson constant, and series resistance were determined from current-voltage characteristics at different temperatures. The diodes indicate a non-ideal current-voltage behavior due to the ideality factor being higher than unity due to the effect of series resistance and the presence of an interfacial layer. The interface state density D it values of the P3HT and P3HT:MEH-PPV diodes vary from 1.829 × 10 10 to 3.825 × 10 11 eV -1 cm -2 and from 4.561 × 10 11 to 3.233 × 10 12 eV -1 cm -2, respectively. The photoconductivity properties of the diodes under various illuminations have been investigated. The photoconductivity parameters of the P3HT:MEH-PPV diode are higher than that of photoconductivity parameters of the P3HT diode.
| Original language | English |
|---|---|
| Pages (from-to) | 41-57 |
| Number of pages | 17 |
| Journal | Microelectronic Engineering |
| Volume | 98 |
| DOIs | |
| State | Published - Oct 2012 |
| Externally published | Yes |
Keywords
- I-V and C-V measurements
- Interface state density
- Organic Schottky diode
- P3HT and MEH-PPV organic semiconductors
- Photoconductivity properties
- Rectification ratio
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