Effect of illumination and frequency on the capacitance spectroscopy and the relaxation process of p-ZnTe/n-CdMnTe/GaAs magnetic diode for photocapacitance applications

Heterostructure of p-ZnTe/n-CdMnTe/GaAs (II-VI/II-VI-DMS/III-V) is grown by molecular beam epitaxially growth (MBE). The capacitance-frequency (C-f) characteristics of the prepared heterostructure under dark and different illumination intensities were analyzed. The studied sample shows a capacitance illumination dependence. Modified Goswami and Goswami (G-G) model was used to interpret the capacitance profile under the effect of the irradiated light. The illumination dependence of the relative capacitance (C_ph/C _d) at different frequency was studied and interpreted. The interface density states (N_ss), the interface capacitance (C_ss) and dielectric relaxation time (τ) are increased with the increase of the illumination intensities. Therefore, the prepared heterostructure can be used as photocapacitance sensor in modern electronic and optoelectronic devices.