TY - GEN
T1 - Double gate MOSFET compact model including scattering
AU - Hamid, Hamdy A.
AU - Iñíguez, B.
AU - Jiménez, D.
AU - Marsal, L. F.
AU - Pallarès, J.
PY - 2005
Y1 - 2005
N2 - This work presents a compact model, which includes scattering, for the silicon quantum well MOSFET. The model is based on the Landauer transmission theory and McKelvey's flux theory, and Is continuous from below to above threshold and from linear to saturation regions. A good agreement with 2-D numerical simulations (nanoMOS) is obtained with our compact model. The effect of backscattering on both the channel conductance and the average velocity near the source end is studied in this work.
AB - This work presents a compact model, which includes scattering, for the silicon quantum well MOSFET. The model is based on the Landauer transmission theory and McKelvey's flux theory, and Is continuous from below to above threshold and from linear to saturation regions. A good agreement with 2-D numerical simulations (nanoMOS) is obtained with our compact model. The effect of backscattering on both the channel conductance and the average velocity near the source end is studied in this work.
UR - https://www.scopus.com/pages/publications/33745683593
U2 - 10.1109/SCED.2005.1504418
DO - 10.1109/SCED.2005.1504418
M3 - Conference contribution
AN - SCOPUS:33745683593
SN - 0780388100
SN - 9780780388109
T3 - 2005 Spanish Conference on Electron Devices, Proceedings
SP - 413
EP - 417
BT - 2005 Spanish Conference on Electron Devices, Proceedings
T2 - 2005 Spanish Conference on Electron Devices
Y2 - 2 February 2005 through 4 February 2005
ER -