CMOS-compatible hybrid bi-metallic TE/TM-pass polarizers based on ITO and ZrN

Ahmed F. Kandeel; Mohamed Farhat O. Hameed; Hamdy Abdelhamid; S. S.A. Obayya

doi:10.1364/AO.58.006684

CMOS-compatible hybrid bi-metallic TE/TM-pass polarizers based on ITO and ZrN

Ahmed F. Kandeel
, Mohamed Farhat O. Hameed
, Hamdy Abdelhamid
, S. S.A. Obayya

Zewail City of Science and Technology
Mansoura University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Transverse-magnetic (TM) and transverse-electric (TE) pass polarizers based on a silicon-on-insulator platform are studied and analyzed. The proposed structures are CMOS-compatible based on indium tin oxide and zirconium nitride as alternative plasmonic materials. The bi-metallic combination of the plasmonic materials exhibit large coupling between one of the modes (TE or TM) in the silicon core and the surface plasmon mode, while the other mode can propagate with low losses. The numerical simulations for the TE-pass polarizer predict 32.7 dB extinction ratio (ER) and 0.13 dB insertion loss (IL) at a compact device length of 1.5 μm. Additionally, the TM-pass polarizer has 31.5 dB ER and 0.17 dB IL at a device length of 2 μm at an operating wavelength of 1.55 μm.

Original language	English
Pages (from-to)	6684-6692
Number of pages	9
Journal	Applied Optics
Volume	58
Issue number	24
DOIs	https://doi.org/10.1364/AO.58.006684
State	Published - 20 Aug 2019
Externally published	Yes

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title = "CMOS-compatible hybrid bi-metallic TE/TM-pass polarizers based on ITO and ZrN",

abstract = "Transverse-magnetic (TM) and transverse-electric (TE) pass polarizers based on a silicon-on-insulator platform are studied and analyzed. The proposed structures are CMOS-compatible based on indium tin oxide and zirconium nitride as alternative plasmonic materials. The bi-metallic combination of the plasmonic materials exhibit large coupling between one of the modes (TE or TM) in the silicon core and the surface plasmon mode, while the other mode can propagate with low losses. The numerical simulations for the TE-pass polarizer predict 32.7 dB extinction ratio (ER) and 0.13 dB insertion loss (IL) at a compact device length of 1.5 μm. Additionally, the TM-pass polarizer has 31.5 dB ER and 0.17 dB IL at a device length of 2 μm at an operating wavelength of 1.55 μm.",

author = "Kandeel, \{Ahmed F.\} and Hameed, \{Mohamed Farhat O.\} and Hamdy Abdelhamid and Obayya, \{S. S.A.\}",

note = "Publisher Copyright: {\textcopyright} 2019 Optical Society of America.",

year = "2019",

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day = "20",

doi = "10.1364/AO.58.006684",

language = "English",

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TY - JOUR

T1 - CMOS-compatible hybrid bi-metallic TE/TM-pass polarizers based on ITO and ZrN

AU - Kandeel, Ahmed F.

AU - Hameed, Mohamed Farhat O.

AU - Abdelhamid, Hamdy

AU - Obayya, S. S.A.

PY - 2019/8/20

Y1 - 2019/8/20

N2 - Transverse-magnetic (TM) and transverse-electric (TE) pass polarizers based on a silicon-on-insulator platform are studied and analyzed. The proposed structures are CMOS-compatible based on indium tin oxide and zirconium nitride as alternative plasmonic materials. The bi-metallic combination of the plasmonic materials exhibit large coupling between one of the modes (TE or TM) in the silicon core and the surface plasmon mode, while the other mode can propagate with low losses. The numerical simulations for the TE-pass polarizer predict 32.7 dB extinction ratio (ER) and 0.13 dB insertion loss (IL) at a compact device length of 1.5 μm. Additionally, the TM-pass polarizer has 31.5 dB ER and 0.17 dB IL at a device length of 2 μm at an operating wavelength of 1.55 μm.

AB - Transverse-magnetic (TM) and transverse-electric (TE) pass polarizers based on a silicon-on-insulator platform are studied and analyzed. The proposed structures are CMOS-compatible based on indium tin oxide and zirconium nitride as alternative plasmonic materials. The bi-metallic combination of the plasmonic materials exhibit large coupling between one of the modes (TE or TM) in the silicon core and the surface plasmon mode, while the other mode can propagate with low losses. The numerical simulations for the TE-pass polarizer predict 32.7 dB extinction ratio (ER) and 0.13 dB insertion loss (IL) at a compact device length of 1.5 μm. Additionally, the TM-pass polarizer has 31.5 dB ER and 0.17 dB IL at a device length of 2 μm at an operating wavelength of 1.55 μm.

UR - https://www.scopus.com/pages/publications/85071013700

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DO - 10.1364/AO.58.006684

M3 - Article

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JO - Applied Optics

JF - Applied Optics

IS - 24

ER -

CMOS-compatible hybrid bi-metallic TE/TM-pass polarizers based on ITO and ZrN

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