Charge Independent DC Model for Floating Gate MOSFET Used for Flash Memory and Electro-optic Switching Applications

A. H. Hassan; Y. Ismail; A. M. Nassar; H. Abd Elhamid; H. S. Ayoub; Y. H. Elbashar

Charge Independent DC Model for Floating Gate MOSFET Used for Flash Memory and Electro-optic Switching Applications

A. H. Hassan
, Y. Ismail
, A. M. Nassar
, H. Abd Elhamid
, H. S. Ayoub
, Y. H. Elbashar

Cairo University
Zewail City of Science and Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Floating- Gate MOSFET (FGMOSFET) is considered as a basis for flash memory and electro-optic switching applications. A compact DC model for FGMOSFET is highly needed. In this work, the parasitic capacitances needed for FGMOSFET is introduced for 0.13 μm CMOS technology. The output characteristics were verified with the spice simulation model in Cadence. Also, a spice model for FGMOSFET can be inserted in any circuit simulator. The model is based on n-channel FGMOSFET. The model is valid from the linear to the saturation regions.

Original language	English
Pages (from-to)	263-278
Number of pages	16
Journal	Nonlinear Optics Quantum Optics
Volume	50
Issue number	4
State	Published - 2019
Externally published	Yes

Keywords

Flash memory
Floating gate MOSFET model
Parasitic capacitances
Spice circuit simulation

Cite this

@article{51c7ed191b4e40a0903d193dc922ee71,

title = "Charge Independent DC Model for Floating Gate MOSFET Used for Flash Memory and Electro-optic Switching Applications",

abstract = "Floating- Gate MOSFET (FGMOSFET) is considered as a basis for flash memory and electro-optic switching applications. A compact DC model for FGMOSFET is highly needed. In this work, the parasitic capacitances needed for FGMOSFET is introduced for 0.13 μm CMOS technology. The output characteristics were verified with the spice simulation model in Cadence. Also, a spice model for FGMOSFET can be inserted in any circuit simulator. The model is based on n-channel FGMOSFET. The model is valid from the linear to the saturation regions.",

keywords = "Flash memory, Floating gate MOSFET model, Parasitic capacitances, Spice circuit simulation",

author = "Hassan, \{A. H.\} and Y. Ismail and Nassar, \{A. M.\} and \{Abd Elhamid\}, H. and Ayoub, \{H. S.\} and Elbashar, \{Y. H.\}",

note = "Publisher Copyright: {\textcopyright}2019 Old City Publishing, Inc.",

year = "2019",

language = "English",

volume = "50",

pages = "263--278",

journal = "Nonlinear Optics Quantum Optics",

issn = "1543-0537",

publisher = "Old City Publishing",

number = "4",

}

TY - JOUR

T1 - Charge Independent DC Model for Floating Gate MOSFET Used for Flash Memory and Electro-optic Switching Applications

AU - Hassan, A. H.

AU - Ismail, Y.

AU - Nassar, A. M.

AU - Abd Elhamid, H.

AU - Ayoub, H. S.

AU - Elbashar, Y. H.

PY - 2019

Y1 - 2019

N2 - Floating- Gate MOSFET (FGMOSFET) is considered as a basis for flash memory and electro-optic switching applications. A compact DC model for FGMOSFET is highly needed. In this work, the parasitic capacitances needed for FGMOSFET is introduced for 0.13 μm CMOS technology. The output characteristics were verified with the spice simulation model in Cadence. Also, a spice model for FGMOSFET can be inserted in any circuit simulator. The model is based on n-channel FGMOSFET. The model is valid from the linear to the saturation regions.

AB - Floating- Gate MOSFET (FGMOSFET) is considered as a basis for flash memory and electro-optic switching applications. A compact DC model for FGMOSFET is highly needed. In this work, the parasitic capacitances needed for FGMOSFET is introduced for 0.13 μm CMOS technology. The output characteristics were verified with the spice simulation model in Cadence. Also, a spice model for FGMOSFET can be inserted in any circuit simulator. The model is based on n-channel FGMOSFET. The model is valid from the linear to the saturation regions.

KW - Flash memory

KW - Floating gate MOSFET model

KW - Parasitic capacitances

KW - Spice circuit simulation

UR - https://www.scopus.com/pages/publications/85068451549

M3 - Article

AN - SCOPUS:85068451549

SN - 1543-0537

VL - 50

SP - 263

EP - 278

JO - Nonlinear Optics Quantum Optics

JF - Nonlinear Optics Quantum Optics

IS - 4

ER -

Charge Independent DC Model for Floating Gate MOSFET Used for Flash Memory and Electro-optic Switching Applications

Abstract

Keywords

Other files and links

Fingerprint

Cite this