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Charge-Based Compact Modeling of Multiple-Gate MOSFET

  • Benjamin Iñiguez
  • , Antonio Lázaro
  • , Hamdy Abd El Hamid
  • , Oana Moldovan
  • , Bogdan Nae
  • , Jaume Roig
  • , David Jiménez
  • Universidad Rovira i Virgili
  • LAAS / CNRS
  • Autonomous University of Barcelona

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

We present new compact modeling techniques which have been applied for different types of multiple-gate MOSFETs: Double-Gate MOSFETs, Gate All Around MOSFETs and FinFETs. Long channel models are obtained by deriving a unified charge control model from the solution the 1-D Poisson's equation (considering volume inversion), and using it in an adequate transport model. The final channel current, charge and capacitance models are written in terms of the charge sheet densities at the source and drain ends of the channel. The short-channel effects can be easily incorporated to this unified model. Analytical and scalable models for the subthreshold swing, threshold voltage roll-off and DIBL have been developed by solving the 2-D or 3-D Poisson equation using appropriate techniques; these models are also based on a physical analysis of the conduction path. We observed a very good agreement with 2-D and 3-D numerical simulations of the characteristics of the different multiple-gate devices. Finally, using the active transmission line approach, we extended our compact models to the high frequency operation, in order to study the RF performance, including noise.

Original languageEnglish
Title of host publicationProceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages49-56
Number of pages8
ISBN (Electronic)1424407869, 9781424407866
DOIs
StatePublished - 2007
Externally publishedYes
Event29th Annual IEEE Custom Integrated Circuits Conference, CICC 2007 - San Jose, United States
Duration: 16 Sep 200719 Sep 2007

Publication series

NameProceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007

Conference

Conference29th Annual IEEE Custom Integrated Circuits Conference, CICC 2007
Country/TerritoryUnited States
CitySan Jose
Period16/09/0719/09/07

Keywords

  • DIBL
  • Double Gate MOSFETs
  • FinFETs
  • Gate All Around MOSFETs
  • compact modeling
  • high frequency noise
  • multiple-gate MOSFETs
  • roll-off
  • threshold voltage

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