Capacitance and conductance characterization of nano-ZnGa 2Te4/n-Si diode

S. S. Fouad; G. B. Sakr; I. S. Yahia; D. M. Abdel-Basset; F. Yakuphanoglu

doi:10.1016/j.materresbull.2013.08.065

Capacitance and conductance characterization of nano-ZnGa ₂Te₄/n-Si diode

S. S. Fouad
, G. B. Sakr
, I. S. Yahia
, D. M. Abdel-Basset
, F. Yakuphanoglu

Ain Shams University
King Khalid University
Firat University

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

Capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of p-ZnGa₂Te₄/n-Si HJD were studied over a wide frequency and temperature. Both the interface states density N_ss and series resistance R_s were strongly frequency and temperature dependent. The interface states density N_ss is decreased with increasing frequency and increase with increasing temperature. The values of the built-in potential (V_bi) were calculated and found to increase with increasing temperature and frequency. The values of capacitance C, conductance G, series resistance R_s, corrected capacitance C_ADJ, corrected conductance G_ADJ, dielectric constant (É′), dielectric loss (É″), loss tangent (tan δ) and the AC conductivity (σ_ac) are strongly dependent on the applied frequency, voltage and temperature. The obtained results show that the locations of N_ss and R_s have a significant effect on the electrical characteristics of the studied diode.

Original language	English
Pages (from-to)	369-383
Number of pages	15
Journal	Materials Research Bulletin
Volume	49
Issue number	1
DOIs	https://doi.org/10.1016/j.materresbull.2013.08.065
State	Published - 2014
Externally published	Yes

Keywords

A. Semiconductors
B. Vapor deposition
C. Atomic force microscopy
C. Impedance spectroscopy
D. Dielectric properties

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10.1016/j.materresbull.2013.08.065

Cite this

@article{ed59442d5fb545c48557b9ce54c69ebd,

title = "Capacitance and conductance characterization of nano-ZnGa 2Te4/n-Si diode",

abstract = "Capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of p-ZnGa2Te4/n-Si HJD were studied over a wide frequency and temperature. Both the interface states density Nss and series resistance Rs were strongly frequency and temperature dependent. The interface states density Nss is decreased with increasing frequency and increase with increasing temperature. The values of the built-in potential (Vbi) were calculated and found to increase with increasing temperature and frequency. The values of capacitance C, conductance G, series resistance Rs, corrected capacitance CADJ, corrected conductance GADJ, dielectric constant ({\'E}′), dielectric loss ({\'E}″), loss tangent (tan δ) and the AC conductivity (σac) are strongly dependent on the applied frequency, voltage and temperature. The obtained results show that the locations of Nss and Rs have a significant effect on the electrical characteristics of the studied diode.",

keywords = "A. Semiconductors, B. Vapor deposition, C. Atomic force microscopy, C. Impedance spectroscopy, D. Dielectric properties",

author = "Fouad, \{S. S.\} and Sakr, \{G. B.\} and Yahia, \{I. S.\} and Abdel-Basset, \{D. M.\} and F. Yakuphanoglu",

year = "2014",

doi = "10.1016/j.materresbull.2013.08.065",

language = "English",

volume = "49",

pages = "369--383",

journal = "Materials Research Bulletin",

issn = "0025-5408",

publisher = "Elsevier Ltd",

number = "1",

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TY - JOUR

T1 - Capacitance and conductance characterization of nano-ZnGa 2Te4/n-Si diode

AU - Fouad, S. S.

AU - Sakr, G. B.

AU - Yahia, I. S.

AU - Abdel-Basset, D. M.

AU - Yakuphanoglu, F.

PY - 2014

Y1 - 2014

N2 - Capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of p-ZnGa2Te4/n-Si HJD were studied over a wide frequency and temperature. Both the interface states density Nss and series resistance Rs were strongly frequency and temperature dependent. The interface states density Nss is decreased with increasing frequency and increase with increasing temperature. The values of the built-in potential (Vbi) were calculated and found to increase with increasing temperature and frequency. The values of capacitance C, conductance G, series resistance Rs, corrected capacitance CADJ, corrected conductance GADJ, dielectric constant (É′), dielectric loss (É″), loss tangent (tan δ) and the AC conductivity (σac) are strongly dependent on the applied frequency, voltage and temperature. The obtained results show that the locations of Nss and Rs have a significant effect on the electrical characteristics of the studied diode.

AB - Capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of p-ZnGa2Te4/n-Si HJD were studied over a wide frequency and temperature. Both the interface states density Nss and series resistance Rs were strongly frequency and temperature dependent. The interface states density Nss is decreased with increasing frequency and increase with increasing temperature. The values of the built-in potential (Vbi) were calculated and found to increase with increasing temperature and frequency. The values of capacitance C, conductance G, series resistance Rs, corrected capacitance CADJ, corrected conductance GADJ, dielectric constant (É′), dielectric loss (É″), loss tangent (tan δ) and the AC conductivity (σac) are strongly dependent on the applied frequency, voltage and temperature. The obtained results show that the locations of Nss and Rs have a significant effect on the electrical characteristics of the studied diode.

KW - A. Semiconductors

KW - B. Vapor deposition

KW - C. Atomic force microscopy

KW - C. Impedance spectroscopy

KW - D. Dielectric properties

UR - https://www.scopus.com/pages/publications/84885394432

U2 - 10.1016/j.materresbull.2013.08.065

DO - 10.1016/j.materresbull.2013.08.065

M3 - Article

AN - SCOPUS:84885394432

SN - 0025-5408

VL - 49

SP - 369

EP - 383

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 1

ER -

Capacitance and conductance characterization of nano-ZnGa ₂Te₄/n-Si diode

Abstract

Keywords

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