@inproceedings{08dca3b2c26a467a852f73dbdcd71f2c,
title = "Assessment of Leakage Current Reduction Techniques for Si-Stacked Nanosheet Transistor at 3-nm Node and Beyond",
abstract = "This study explores how different methods of reducing leakage current affect the performance of Si nanosheet field effect transistors (NS-FETs) at sub-3-nm technology nodes. We examine the impact of punch-through stopper (PTS) and bottom dielectric isolation (BDI) techniques on lattice temperature of the device and stress induced in the channel. We use a new simulation method that combines quantum-mechanically corrected Monte Carlo (MC) simulation and calibrated drift-diffusion. The TCAD model is calibrated with the most recent experimental data available in the literature. At the same node technology, our research revealed an increase by 44 K in lattice temperature due to the BDI scheme compared to the PTS scheme. The study also revealed a decrease by 88\% in the channel stress, and a reduction in the ON-current by 18\%. The PTS schemes suffer from the short channel effects (SCEs) compared to the BDI structures.",
keywords = "Nanosheet FET (NS-FET), bottom dielectric isolation, self-heating effect (SHE), stress",
author = "Mohamed Saleh and Hamdy Abdelhamid and Bayoumi, \{Amr M.\}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 6th IEEE Novel Intelligent and Leading Emerging Sciences Conference, NILES 2024 ; Conference date: 19-10-2024 Through 21-10-2024",
year = "2024",
doi = "10.1109/NILES63360.2024.10753173",
language = "English",
series = "NILES 2024 - 6th Novel Intelligent and Leading Emerging Sciences Conference, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "46--49",
booktitle = "NILES 2024 - 6th Novel Intelligent and Leading Emerging Sciences Conference, Proceedings",
address = "United States",
}