Applications of inorganic resists to sub-micron fabrication

Mino Green; C. J. Aidinis; F. Khaleque; Y. Feng

doi:10.1016/0167-9317(90)90166-Q

Applications of inorganic resists to sub-micron fabrication

Mino Green
, C. J. Aidinis
, F. Khaleque
, Y. Feng

Imperial College London

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Several metal halides are considered for use in various resist schemes. CdCl₂ as a direct write resist, in which e-beam induced decomposition to volatile products at temperatures >90°C is described. Contrast is 2, selectivity towards SiO₂ is >60 in a CHF₃/O₂ RIE etch, sensitivity is ca 10mC/cm². Two and three level resist schemes, taking advantage of the higher volatility of CdI₂ over CdCl₂, are proposed to increase sensitivity and to construct T-bar structures. Very small, ca 0.1μ, structures using CdF₂ and PMMA in a pattern reversal scheme are described. Finally, lead/cadmium alloy lines directly written by e-beam decomposition of a mixed halide thin film are demonstrated.

Original language	English
Pages (from-to)	539-542
Number of pages	4
Journal	Microelectronic Engineering
Volume	11
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(90)90166-Q
State	Published - Apr 1990
Externally published	Yes

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title = "Applications of inorganic resists to sub-micron fabrication",

abstract = "Several metal halides are considered for use in various resist schemes. CdCl2 as a direct write resist, in which e-beam induced decomposition to volatile products at temperatures >90°C is described. Contrast is 2, selectivity towards SiO2 is >60 in a CHF3/O2 RIE etch, sensitivity is ca 10mC/cm2. Two and three level resist schemes, taking advantage of the higher volatility of CdI2 over CdCl2, are proposed to increase sensitivity and to construct T-bar structures. Very small, ca 0.1μ, structures using CdF2 and PMMA in a pattern reversal scheme are described. Finally, lead/cadmium alloy lines directly written by e-beam decomposition of a mixed halide thin film are demonstrated.",

author = "Mino Green and Aidinis, \{C. J.\} and F. Khaleque and Y. Feng",

year = "1990",

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doi = "10.1016/0167-9317(90)90166-Q",

language = "English",

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journal = "Microelectronic Engineering",

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TY - JOUR

T1 - Applications of inorganic resists to sub-micron fabrication

AU - Green, Mino

AU - Aidinis, C. J.

AU - Khaleque, F.

AU - Feng, Y.

PY - 1990/4

Y1 - 1990/4

N2 - Several metal halides are considered for use in various resist schemes. CdCl2 as a direct write resist, in which e-beam induced decomposition to volatile products at temperatures >90°C is described. Contrast is 2, selectivity towards SiO2 is >60 in a CHF3/O2 RIE etch, sensitivity is ca 10mC/cm2. Two and three level resist schemes, taking advantage of the higher volatility of CdI2 over CdCl2, are proposed to increase sensitivity and to construct T-bar structures. Very small, ca 0.1μ, structures using CdF2 and PMMA in a pattern reversal scheme are described. Finally, lead/cadmium alloy lines directly written by e-beam decomposition of a mixed halide thin film are demonstrated.

AB - Several metal halides are considered for use in various resist schemes. CdCl2 as a direct write resist, in which e-beam induced decomposition to volatile products at temperatures >90°C is described. Contrast is 2, selectivity towards SiO2 is >60 in a CHF3/O2 RIE etch, sensitivity is ca 10mC/cm2. Two and three level resist schemes, taking advantage of the higher volatility of CdI2 over CdCl2, are proposed to increase sensitivity and to construct T-bar structures. Very small, ca 0.1μ, structures using CdF2 and PMMA in a pattern reversal scheme are described. Finally, lead/cadmium alloy lines directly written by e-beam decomposition of a mixed halide thin film are demonstrated.

UR - https://www.scopus.com/pages/publications/0025418064

U2 - 10.1016/0167-9317(90)90166-Q

DO - 10.1016/0167-9317(90)90166-Q

M3 - Article

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SN - 0167-9317

VL - 11

SP - 539

EP - 542

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Applications of inorganic resists to sub-micron fabrication

Abstract

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