Analytical predictive modeling for the study of the scalability limits of multiple gate MOSFETs

Hamdy Abd El-Hamid; Jaume Roig; Benjamin Iñíguez

doi:10.1016/j.sse.2006.12.009

Analytical predictive modeling for the study of the scalability limits of multiple gate MOSFETs

Hamdy Abd El-Hamid
, Jaume Roig
, Benjamin Iñíguez

Escola Tècnica Superior d'Enginyeria Química
LAAS / CNRS

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We have developed analytical, models for the threshold voltage, the subthreshold swing and DIBL of undoped cylindrical Gate All Around (GAA) MOSFETs and Double Gate (DG) MOSFET using an analytical solution of the two-dimensional (2D) Poisson equation in which the mobile charge term has been considered. Using this new model, we have studied the scalability limits of GAA and DG MOSFETs and compared their performances. We have found that, to obtain a given performance, GAA MOSFETs can have a 33% shorter channel length than DG MOSFETs.

Original language	English
Pages (from-to)	414-422
Number of pages	9
Journal	Solid-State Electronics
Volume	51
Issue number	3
DOIs	https://doi.org/10.1016/j.sse.2006.12.009
State	Published - Mar 2007
Externally published	Yes

Keywords

DIBL
Device modeling
Double Gate MOSFET
Gate All Around MOSFETs
Nanoscale semiconductor devices
Scaling rules
Subthreshold swing
Threshold voltage

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10.1016/j.sse.2006.12.009

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title = "Analytical predictive modeling for the study of the scalability limits of multiple gate MOSFETs",

abstract = "We have developed analytical, models for the threshold voltage, the subthreshold swing and DIBL of undoped cylindrical Gate All Around (GAA) MOSFETs and Double Gate (DG) MOSFET using an analytical solution of the two-dimensional (2D) Poisson equation in which the mobile charge term has been considered. Using this new model, we have studied the scalability limits of GAA and DG MOSFETs and compared their performances. We have found that, to obtain a given performance, GAA MOSFETs can have a 33\% shorter channel length than DG MOSFETs.",

keywords = "DIBL, Device modeling, Double Gate MOSFET, Gate All Around MOSFETs, Nanoscale semiconductor devices, Scaling rules, Subthreshold swing, Threshold voltage",

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year = "2007",

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pages = "414--422",

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T1 - Analytical predictive modeling for the study of the scalability limits of multiple gate MOSFETs

AU - Abd El-Hamid, Hamdy

AU - Roig, Jaume

AU - Iñíguez, Benjamin

PY - 2007/3

Y1 - 2007/3

N2 - We have developed analytical, models for the threshold voltage, the subthreshold swing and DIBL of undoped cylindrical Gate All Around (GAA) MOSFETs and Double Gate (DG) MOSFET using an analytical solution of the two-dimensional (2D) Poisson equation in which the mobile charge term has been considered. Using this new model, we have studied the scalability limits of GAA and DG MOSFETs and compared their performances. We have found that, to obtain a given performance, GAA MOSFETs can have a 33% shorter channel length than DG MOSFETs.

AB - We have developed analytical, models for the threshold voltage, the subthreshold swing and DIBL of undoped cylindrical Gate All Around (GAA) MOSFETs and Double Gate (DG) MOSFET using an analytical solution of the two-dimensional (2D) Poisson equation in which the mobile charge term has been considered. Using this new model, we have studied the scalability limits of GAA and DG MOSFETs and compared their performances. We have found that, to obtain a given performance, GAA MOSFETs can have a 33% shorter channel length than DG MOSFETs.

KW - DIBL

KW - Device modeling

KW - Double Gate MOSFET

KW - Gate All Around MOSFETs

KW - Nanoscale semiconductor devices

KW - Scaling rules

KW - Subthreshold swing

KW - Threshold voltage

UR - https://www.scopus.com/pages/publications/33947698957

U2 - 10.1016/j.sse.2006.12.009

DO - 10.1016/j.sse.2006.12.009

M3 - Article

AN - SCOPUS:33947698957

SN - 0038-1101

VL - 51

SP - 414

EP - 422

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

Analytical predictive modeling for the study of the scalability limits of multiple gate MOSFETs

Abstract

Keywords

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