Analysis of the Radiation Attenuation Parameters of Cu2HgI4, Ag2HgI4 and (Cu/Ag/Hg I) Semiconductor Compounds

This analysis aims to determine photon attenuation for five different ternary and binary iodide compounds using Phy‐X/PSD software. For a broad range of photon energies between 0.015 and 15 MeV, the mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half‐value layer (HVL), tenth‐value layer (TVL), and mean free path (MFP) for the samples of Cu2HgI4, Ag2HgI4, CuI, AgI, and HgI were calculated. For illustration, the following values of TVL apply at 1 MeV: S1: 6.062 cm, S2: 6.209 cm, S3: 6.929 cm, S4: 6.897 cm, and S5: 4.568 cm. Some important parameters, such as total atomic cross‐sections (ACS), electronic cross‐sections (ECS), the effective atomic numbers (Zeff), effective electron density (Neff), and effective conductivity (Ceff) of the samples were also calculated. Additionally, exposure buildup factors (EBF) and energy‐absorption buildup factor (EABF) were estimated. These data on the radiation characteristics of our samples could be useful for gamma attenuation. The HgI sample has the highest FNRCS values (0.0892) relative to the other tested samples showing good neutron attenuation features. The CuI sample shows low gamma attenuation features; in contrast, it shows high neutron attenuation features.