@inproceedings{eb2655a5be6c4d2cbde180e2f1f288cf,
title = "An Envelope Domain Probe into Nonlinear Behaviour of a High Frequency Power Transistor",
abstract = "This paper reports on precise evaluation of nonlinear behavior of a high frequency power transistor by expanding waveform measurement and engineering capabilities into the modulated envelope domain. Real time modulated measurements to capture all the spectral information including Direct Current (DC), Intermediate Frequency (IF) and Radio Frequency (RF) spectra, critical to rebuild the modulation envelopes are performed on 10W GaN HEMT under modulated excitation. Analysis is performed on measured data in envelope domain to uncover the performance of the high frequency power transistor, which highlights the significance of the robust characterization and measurements of the device for future wireless communication systems.",
keywords = "envelope domain, hysteresis, modulated measurements, nonlinearity, power transistor",
author = "Chaudhary, \{Muhammad Akmal\}",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 14th IEEE International Conference on Semiconductor Electronics, ICSE 2020 ; Conference date: 28-07-2020 Through 29-07-2020",
year = "2020",
month = jul,
doi = "10.1109/ICSE49846.2020.9166904",
language = "English",
series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "37--40",
booktitle = "Proceedings - 2020 IEEE International Conference on Semiconductor Electronics, ICSE 2020",
address = "United States",
}