Amorphous Ta₂O₅ MIM capacitors prepared by electron beam gun

Thin films of Ta₂O₅ have been fabricated by the direct electron beam gun evaporation technique, in an oxygen atmosphere. The capacitance of Ta₂O₅ MIM structure of thickness 666nm was determined. Ta₂O₅ thin film capacitors were studied at the temperature range (303-503K) and in the frequency range (100Hz-100kHz). Both of the measured capacitance C_m and dissipation factor tan d showed a pronounced dependence at the higher temperatures and lower frequencies. Goswami and Goswami (G-G) model was used to interpret the predicted characterization features of the measured capacitors and the dissipation factor as a function of temperature and frequency. The frequency dependence of the dissipation factor tan d at different temperatures shows a relaxation process. The results of the relative capacitance C_T C_RT suggested the temperature and frequency dependencies. MIM of Ta₂O₅ is a good candidate for the dielectric capacitors for DRAM applications.