A simple model of the nanoscale double gate MOSFET based on the flux method

H. A. Hamid; B. Iñíguez; D. Jiménez; L. F. Marsal; J. Pallarès

doi:10.1002/pssc.200460744

A simple model of the nanoscale double gate MOSFET based on the flux method

H. A. Hamid
, B. Iñíguez
, D. Jiménez
, L. F. Marsal
, J. Pallarès

Universidad Rovira i Virgili
Autonomous University of Barcelona

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We present a physics-based model for the double gate MOSFET, which incorporates the effect of the scattering along the channel. The model is based on the McKelvey's flux theory, and properly captures the transition between the different operation regions. The effect of scattering on both the channel conductance and the average velocity near the source end is examined.

Original language	English
Pages (from-to)	3086-3089
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	8
DOIs	https://doi.org/10.1002/pssc.200460744
State	Published - 2005
Externally published	Yes

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10.1002/pssc.200460744

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title = "A simple model of the nanoscale double gate MOSFET based on the flux method",

abstract = "We present a physics-based model for the double gate MOSFET, which incorporates the effect of the scattering along the channel. The model is based on the McKelvey's flux theory, and properly captures the transition between the different operation regions. The effect of scattering on both the channel conductance and the average velocity near the source end is examined.",

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AU - Hamid, H. A.

AU - Iñíguez, B.

AU - Jiménez, D.

AU - Marsal, L. F.

AU - Pallarès, J.

PY - 2005

Y1 - 2005

N2 - We present a physics-based model for the double gate MOSFET, which incorporates the effect of the scattering along the channel. The model is based on the McKelvey's flux theory, and properly captures the transition between the different operation regions. The effect of scattering on both the channel conductance and the average velocity near the source end is examined.

AB - We present a physics-based model for the double gate MOSFET, which incorporates the effect of the scattering along the channel. The model is based on the McKelvey's flux theory, and properly captures the transition between the different operation regions. The effect of scattering on both the channel conductance and the average velocity near the source end is examined.

UR - https://www.scopus.com/pages/publications/27344436459

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DO - 10.1002/pssc.200460744

M3 - Article

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VL - 2

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JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 8

ER -

A simple model of the nanoscale double gate MOSFET based on the flux method

Abstract

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