A masking approach for anisotropic silicon wet etching

P. Normand; K. Beltsios; A. Tserepi; K. Aidinis; D. Tsoukalas; C. Cardinaud

doi:10.1149/1.1398559

A masking approach for anisotropic silicon wet etching

P. Normand
, K. Beltsios
, A. Tserepi
, K. Aidinis
, D. Tsoukalas
, C. Cardinaud

Demokritos National Centre for Scientific Research
National and Kapodistrian University of Athens
Nantes Université

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A new simple and rapid room-temperature silicon masking approach based on the exposure of silicon to CHF₃-based plasma is presented. This plasma treatment leads to silicon surface modifications appropriate for masking purposes during anisotropic etching in ethylenediamine-pyrocatechol-water (EPW) solutions. The resistance of the mask to EPW etching solutions is studied as a function of plasma radio frequency power and pressure, plasma duration, silicon surface preparation, and aging. Mask resistance increases with increasing power density and decreasing pressure. Plasma duration has a significant effect on the temporal and spatial pattern of defects that evolve during etching and lead eventually to mask destruction.

Original language	English
Pages (from-to)	G73-G76
Journal	Electrochemical and Solid-State Letters
Volume	4
Issue number	10
DOIs	https://doi.org/10.1149/1.1398559
State	Published - Oct 2001
Externally published	Yes

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title = "A masking approach for anisotropic silicon wet etching",

abstract = "A new simple and rapid room-temperature silicon masking approach based on the exposure of silicon to CHF3-based plasma is presented. This plasma treatment leads to silicon surface modifications appropriate for masking purposes during anisotropic etching in ethylenediamine-pyrocatechol-water (EPW) solutions. The resistance of the mask to EPW etching solutions is studied as a function of plasma radio frequency power and pressure, plasma duration, silicon surface preparation, and aging. Mask resistance increases with increasing power density and decreasing pressure. Plasma duration has a significant effect on the temporal and spatial pattern of defects that evolve during etching and lead eventually to mask destruction.",

author = "P. Normand and K. Beltsios and A. Tserepi and K. Aidinis and D. Tsoukalas and C. Cardinaud",

year = "2001",

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T1 - A masking approach for anisotropic silicon wet etching

AU - Normand, P.

AU - Beltsios, K.

AU - Tserepi, A.

AU - Aidinis, K.

AU - Tsoukalas, D.

AU - Cardinaud, C.

PY - 2001/10

Y1 - 2001/10

N2 - A new simple and rapid room-temperature silicon masking approach based on the exposure of silicon to CHF3-based plasma is presented. This plasma treatment leads to silicon surface modifications appropriate for masking purposes during anisotropic etching in ethylenediamine-pyrocatechol-water (EPW) solutions. The resistance of the mask to EPW etching solutions is studied as a function of plasma radio frequency power and pressure, plasma duration, silicon surface preparation, and aging. Mask resistance increases with increasing power density and decreasing pressure. Plasma duration has a significant effect on the temporal and spatial pattern of defects that evolve during etching and lead eventually to mask destruction.

AB - A new simple and rapid room-temperature silicon masking approach based on the exposure of silicon to CHF3-based plasma is presented. This plasma treatment leads to silicon surface modifications appropriate for masking purposes during anisotropic etching in ethylenediamine-pyrocatechol-water (EPW) solutions. The resistance of the mask to EPW etching solutions is studied as a function of plasma radio frequency power and pressure, plasma duration, silicon surface preparation, and aging. Mask resistance increases with increasing power density and decreasing pressure. Plasma duration has a significant effect on the temporal and spatial pattern of defects that evolve during etching and lead eventually to mask destruction.

UR - https://www.scopus.com/pages/publications/0035496828

U2 - 10.1149/1.1398559

DO - 10.1149/1.1398559

M3 - Article

AN - SCOPUS:0035496828

SN - 1099-0062

VL - 4

SP - G73-G76

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 10

ER -

A masking approach for anisotropic silicon wet etching

Abstract

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