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A comparative evaluation of single-walled carbon nanotubes and copper in interconnects and Through-Silicon Vias

  • German University in Cairo
  • Zewail City of Science and Technology
  • Cairo University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this paper we compare Single-walled Carbon nanotubes (SWCNT) and copper as fillers for Through-Silicon Vias (TSVs) in 3D chips and as materials for on chip interconnects. It is shown that vias and interconnects made from SWCNTs handle crosstalk better than those made from copper. The choice of SWCNT is based on their higher resilience to electromigration due to the strong sp2 bonding between the carbon atoms, which enables SWCNT wires to carry more current than a copper wire of the same dimensions.

Original languageEnglish
Title of host publication2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages519-522
Number of pages4
ISBN (Electronic)9781509002467
DOIs
StatePublished - 23 Mar 2016
Externally publishedYes
EventIEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015 - Cairo, Egypt
Duration: 6 Dec 20159 Dec 2015

Publication series

NameProceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Volume2016-March

Conference

ConferenceIEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015
Country/TerritoryEgypt
CityCairo
Period6/12/159/12/15

Keywords

  • Carbon Nanotube (CNT)
  • Crosstalk
  • Interconnect
  • Through-Silicon Via (TSV)

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