A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs

Hamdy Abd El Hamid; Jaume Roig Guitart; Valeria Kilchytska; Denis Flandre; Benjamin Iñiguez

doi:10.1109/TED.2007.902415

A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs

Hamdy Abd El Hamid
, Jaume Roig Guitart
, Valeria Kilchytska
, Denis Flandre
, Benjamin Iñiguez

Universidad Rovira i Virgili
CNRS
Université catholique de Louvain

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

An analytical physically based analysis for undoped FinFET devices in the subthreshold and near-threshold regimes has been developed by solving the 3-D Poisson equation, in which the mobile-charge term was included. From this analysis, a subthreshold-swing model has been developed; this model is also based on a new physically based analysis of the conduction path. The subthreshold-swing model has been verified by comparison with 3-D numerical simulations and measured values; a very good agreement with both 3-D numerical simulation and the experimental results was observed.

Original language	English
Pages (from-to)	2487-2496
Number of pages	10
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	9
DOIs	https://doi.org/10.1109/TED.2007.902415
State	Published - Sep 2007
Externally published	Yes

Keywords

3-D Poisson's equation
Conduction path
Semiconductor-device modeling
Subthreshold swing
Undoped FinFET

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10.1109/TED.2007.902415

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title = "A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs",

abstract = "An analytical physically based analysis for undoped FinFET devices in the subthreshold and near-threshold regimes has been developed by solving the 3-D Poisson equation, in which the mobile-charge term was included. From this analysis, a subthreshold-swing model has been developed; this model is also based on a new physically based analysis of the conduction path. The subthreshold-swing model has been verified by comparison with 3-D numerical simulations and measured values; a very good agreement with both 3-D numerical simulation and the experimental results was observed.",

keywords = "3-D Poisson's equation, Conduction path, Semiconductor-device modeling, Subthreshold swing, Undoped FinFET",

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year = "2007",

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language = "English",

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pages = "2487--2496",

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T1 - A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs

AU - El Hamid, Hamdy Abd

AU - Guitart, Jaume Roig

AU - Kilchytska, Valeria

AU - Flandre, Denis

AU - Iñiguez, Benjamin

PY - 2007/9

Y1 - 2007/9

N2 - An analytical physically based analysis for undoped FinFET devices in the subthreshold and near-threshold regimes has been developed by solving the 3-D Poisson equation, in which the mobile-charge term was included. From this analysis, a subthreshold-swing model has been developed; this model is also based on a new physically based analysis of the conduction path. The subthreshold-swing model has been verified by comparison with 3-D numerical simulations and measured values; a very good agreement with both 3-D numerical simulation and the experimental results was observed.

AB - An analytical physically based analysis for undoped FinFET devices in the subthreshold and near-threshold regimes has been developed by solving the 3-D Poisson equation, in which the mobile-charge term was included. From this analysis, a subthreshold-swing model has been developed; this model is also based on a new physically based analysis of the conduction path. The subthreshold-swing model has been verified by comparison with 3-D numerical simulations and measured values; a very good agreement with both 3-D numerical simulation and the experimental results was observed.

KW - 3-D Poisson's equation

KW - Conduction path

KW - Semiconductor-device modeling

KW - Subthreshold swing

KW - Undoped FinFET

UR - https://www.scopus.com/pages/publications/41749105329

U2 - 10.1109/TED.2007.902415

DO - 10.1109/TED.2007.902415

M3 - Article

AN - SCOPUS:41749105329

SN - 0018-9383

VL - 54

SP - 2487

EP - 2496

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

ER -

A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs

Abstract

Keywords

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