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3-D analytical models for the short-channel effect parameters in undoped FinFET devices

  • Universidad Rovira i Virgili
  • LAAS / CNRS
  • Université catholique de Louvain

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

An analytical and scalable model for the subthreshold swing and the threshold voltage in FinFETs has been developed by solving the 3-D Poisson equation using appropriate techniques. The model is also based on a physical analysis of the conduction path. The mobile charge term was considered in the 3-D Poisson's equation to be solved. Due to its 3-D basis, the model inherently accounts for short-channel effects, such as the subthreshold swing degradation, threshold voltage roll-off and the Drain Induced Barrier Lowering (DIBL) effect. A very good agreement with 3-D numerical simulations has been obtained.

Original languageEnglish
Title of host publication2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Pages515-519
Number of pages5
StatePublished - 2007
Externally publishedYes
Event2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA, United States
Duration: 20 May 200724 May 2007

Publication series

Name2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Volume3

Conference

Conference2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007
Country/TerritoryUnited States
CitySanta Clara, CA
Period20/05/0724/05/07

Keywords

  • 3-D Poisson's equation
  • Conduction path
  • DIBL
  • Threshold voltage
  • Threshold voltage roll-off
  • Undoped FinFET

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